Self-pulsating semiconductor laser

Details Self-pulsating semiconductor laser Self-pulsating semiconductor laser

1997-11-18

1999-10-12

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 43, 372 44, 372 45, H01S 319

Patent

active

059663979

ABSTRACT:
A semiconductor laser includes an n-type GaAs current blocking layer formed at both sides of a stripe portion made of an upper-lying portion of a p-type AlGaInP cladding layer, p-type GaInP intermediate layer and p-type GaAs cap layer to form a current blocking structure, and the p-type AlGaInP cladding layer has a thickness d.sub.1 at both sides of the stripe portion and a thickness d.sub.2 outside them (0<d.sub.1 <d.sub.2) to effect optical guide by transversely changing refractive indices. In this case, the semiconductor laser has a refractive index n.sub.1 in the stripe portion, a refractive index n.sub.2 at both sides of the stripe portion, and a refractive index n.sub.3 in further outer sides (n.sub.2 <n.sub.3 <n.sub.1). Width W.sub.G of a gain region inside a GaInP active layer and width W.sub.P of an optical guide region (W.sub.G <W.sub.P) are controlled independently, and a saturable absorbing region with a sufficient area is ensured.

REFERENCES:
patent: 5311534 (1994-05-01), Mori et al.
patent: 5523256 (1996-06-01), Adachi et al.
Patent Abstracts of Japan, vol. 9, No. 240 (1985) JP60-089991 (Fujitsu) (May).
Appl. Phys. Lett. 61, "Antiresonant reflecting optical waveguide-type single mode diode lasers", Aug. 1992, No. 5, New York, US, Mawst et al.
IEEE Journal of Quantum Electronics, "A real-index guided InGaAIP visible laser diode with a small beam astigmatism", (Jun. 27, 1991) No. 6, Okajima et al.

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