Self-preionizing resistively ballasted semiconductor electrode

Details Self-preionizing resistively ballasted semiconductor electrode Self-preionizing resistively ballasted semiconductor electrode

1988-11-07

1990-02-27

Davie, James W.

Coherent light generators

Particular pumping means

Electrical

372 38, 372 83, 372 86, H01S 300, H01S 3097

Patent

active

049052519

ABSTRACT:
An electrode for a discharge region of a transversely purged gas discharge laser. The electrode in a discharge region includes blocks of semiconductor material having widely different dielectric constants configured about the center and ground electrodes of the discharge region. When the electrode is subjected to a quickly changing voltage pulse, the different time constants of the blocks of semiconductor material cause a surface discharge to be generated near the surface of the electrode. This surface discharge preionizes the discharge region. Subsequently, as the semiconductor regions become more resistive, the surface discharge dissipates and the electrodes behaves as a resistively ballasted discharge electrode. An electronic circuit for driving the electrode is also disclosed.

REFERENCES:
patent: 4703490 (1987-10-01), Brumme et al.

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