Self-powered nonregenerative fast gate turn-off FET

Details Self-powered nonregenerative fast gate turn-off FET Self-powered nonregenerative fast gate turn-off FET

1982-06-21

1985-02-19

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307246, 307572, 307581, H03K 1704, H03K 17687

Patent

active

045008019

ABSTRACT:
A fast turn-off FET circuit is provided by a bipolar transistor in the gate circuit of the FET. The bipolar transistor is driven into conduction by residual charge in the gate to source capacitance of the FET upon turn-off of the latter due to removal of gate drive. Conduction of the bipolar transistor provides faster discharge therethrough of the FET gate, whereby to facilitate faster FET turn-off without reverse gating current and its attendant auxiliary power supply.

REFERENCES:
patent: 3819952 (1974-06-01), Enomoto et al.
patent: 4266149 (1981-05-01), Yoshida
patent: 4347445 (1982-08-01), Baker
patent: 4423341 (1983-12-01), Shelly

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