Self-pinned spin valve sensor with stress modification...

Details Self-pinned spin valve sensor with stress modification... Self-pinned spin valve sensor with stress modification...

2007-03-27

2007-03-27

Watko, Julie Anne (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

10788727

ABSTRACT:
A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.

REFERENCES:
patent: 5583725 (1996-12-01), Coffey et al.
patent: 6295187 (2001-09-01), Pinarbasi
patent: 6548114 (2003-04-01), Mao et al.
patent: 2005/0180057 (2005-08-01), Freitag et al.
Fakuzawa, et al. Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers,Journal of Applied Physics, Mar. 1, 2002, pp. 3120-3124, 91, 5.

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