Self-organized pin-type nanostructures, and production...

Details Self-organized pin-type nanostructures, and production... Self-organized pin-type nanostructures, and production...

2006-10-10

2011-11-15

Ho, Tu-Tu (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C438S073000, C438S706000, C438S737000, C257S618000, C257S656000, C257SE29336

Reexamination Certificate

active

08058086

ABSTRACT:
By means of an RIE etch process for silicon (3), a pin-type structure (4,4a) without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interference lithography, and the like) by selecting the gas components of the etch plasma in self-organization wherein, among others, a broadband antireflective behavior is obtained that may be applicable in many fields.

REFERENCES:
patent: 3493822 (1970-02-01), Iles
patent: 4717448 (1988-01-01), Cox et al.
patent: 4778563 (1988-10-01), Stone
patent: 5429708 (1995-07-01), Linford et al.
patent: 6038065 (2000-03-01), Borden
patent: 6091021 (2000-07-01), Ruby et al.
patent: 6329296 (2001-12-01), Ruby et al.
patent: 6579777 (2003-06-01), Yen et al.
patent: 6946362 (2005-09-01), Gore et al.
patent: 2002/0000244 (2002-01-01), Zaidi
patent: 2002/0022339 (2002-02-01), Kirchhoff
patent: 2005/0244324 (2005-11-01), Hatta et al.
patent: 2006/0251995 (2006-11-01), Wille et al.
patent: 690 26 469 (1996-04-01), None
patent: 199 12 737 (2000-06-01), None
patent: 100 36 725 (2002-11-01), None
patent: 102 39 642 (2004-06-01), None
patent: 102 39 643 (2004-06-01), None
patent: 44 15 567 (2004-11-01), None
patent: 103 52 423 (2005-01-01), None
patent: 103 93 222 (2005-09-01), None
patent: 0 427 395 (1991-05-01), None
patent: 1 215 513 (2002-06-01), None
patent: 1 536 461 (2005-06-01), None
patent: 2 289 060 (1995-11-01), None
patent: 96 08036 (1996-03-01), None
patent: 02 13279 (2002-02-01), None
patent: 02 13279 (2002-02-01), None
patent: 2004 021452 (2004-03-01), None
patent: 2005 045941 (2005-05-01), None
patent: 2005 053037 (2005-06-01), None
Jansen, De Boer, Otter, Elwenspoek; “The Black Silicon Method IV”; in: Micro Electro Mechanical Systems; 1995; IEEE; Jan. 29, 1995; pp. 88-93.
De Rosa, Addonizio, Chiacchio, Roca, Tucci;: “Plasma Etching Conditioning of Textured Crystalline Silicon Surfaces . . . ”; in: Mat. Res. Soc. Symp. Proc.; May 4, 1999; vol. 557; pp. 585-590.
Schnell, Lindemann, Schaefer; Plasma Surface Texturization for Multicrystalline Silicon Solar Cells; in: Photovoltaic Specialists Conference; 2000; IEEE; pp. 367-370.
Ruby, Zaidi, Narayanan; “Plasma-Texturization for Multicrystalline Silicon Solar Cells”; in: Photovoltaic Specialist Conference; 2000; IEEE; pp. 75-78.
Zaidi, Ruby,Gee; “Characterization of Random Reactive Ion Etched-Textured Silicon . . . ”; in: IEEE Transactions on Electron Devices; vol. 48; No. 6; Jun. 2001; pp. 1200-1206.
Kanechia, Sugimoto, Mitsushima; “Study on a Condition for Forming the High Density of Silicon . . . ”; in: Journal of Vac. Sci. Technol. B; vol. 20, Issue 5; Sep./Oct. 2002; pp. 1843-1846.
Kumaravelu, Alkaisi, Bittar; “Surface Texturing for Silicon Solar Cells Using Reactive Ion . . . ”; in: Photovoltaic Specialist Conference; 2002; IEEE; pp. 258-261.
Jansen, De Boer, Legtenberg, Elvenspoek; “The Black Silicon Method: A Universal Method for Determining the Parameter Setting of a Fluorine-based Reactive Ion Etcher in Deep Silicon Trench Etching with Profile Control”; J. Micromech, Microeng.; vol. 5; 1995; pp. 115-120.
Wilson, Hutley; “The Optical Properties of “Moth Eye” Antireflection Surfaces”; Optica ACTA; vol. 29, No. 7; 1982; pp. 993-1009.
Bressers, Kelly, Gardeniers, Elvenspoek; “Surface Morphologie of p-Type (100) Silicon Etched in Aqueous Alkaline Solution”; J. Electrochem. Soc.; vol. 143, No. 5; May 1996; pp. 1744-1750.
Ehrlich, Hudda; “Atomic View of Surface Self-Diffusion: Tungsten on Tungsten”; The Journal of Chemical Physics; vol. 44, No. 3; Feb. 1, 1966; pp. 1039-1049.
Deckmann, Dunsmuir; “Natural lithographie”; Appl. Phys. Lett. 41 (4); Aug. 15, 1982; pp. 377-379.
Bradley, Harper; “Theory of Ripple Topography Induced by Ion Bombardment”; J. Vac. Sci. Technol. A 6 (4); Jul./Aug. 1988; pp. 2390-2395.
Klopfenstein, P.; International Search Report for PCT/EP20061067248—mailed Apr. 10, 2007.
Dreschers, Diana; Partial International Search Report for PCT/EP2006/067249—mailed Feb. 11, 2008.
Visentin, Alberto; International Search Report for PCT/EP2006/067249—mailed Mar. 3, 2008.

Affiliated with

Also associated with

Rating

Self-organized pin-type nanostructures, and production... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-organized pin-type nanostructures, and production..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-organized pin-type nanostructures, and production... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4268648