Self-multiplexed monolithic intrinsic infrared detector

Details Self-multiplexed monolithic intrinsic infrared detector Self-multiplexed monolithic intrinsic infrared detector

1979-05-07

1981-03-17

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 16, 357 30, 357 61, 307221D, 250338, 250370, H01L 2978, H01L 29205, H01L 2714, H01L 3100

Patent

active

042570573

ABSTRACT:
In this monolithic detector array, a signal processing layer is epitaxially formed directly on an active detector layer. The active detector layer is supported by a transparent substrate. The three layers are made of intrinsic semiconductors of the same conductivity type (e.g., n-type). The semiconductor forming the active layer has a smaller bandgap than the signal processing and substrate layers. A plurality of vias of opposite conductivity type (e.g, p-type) extend through the signal processing layer into the active detector layer where they form p-n junctions with the active detector layer. These p-n junctions collect charges generated by the radiation and the vias conduct these charges to the signal processing layer where gates, AC background suppression circuitry, and a charge coupled device process the photogenerated signals.

REFERENCES:
patent: 4142198 (1979-02-01), Finnila et al.
patent: 4176369 (1979-11-01), Nelson et al.

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