Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-11-07
2006-11-07
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S084000, C257S088000, C257S099000, C257S290000, C257S291000
Reexamination Certificate
active
07132693
ABSTRACT:
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole46is improved. By forming the organic EL material after embedding an insulator in an electrode hole46on a pixel electrode and forming a protective portion41b, failure film formation in the electrode hole46can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
REFERENCES:
patent: 4792500 (1988-12-01), Kojima
patent: 5117299 (1992-05-01), Kondo et al.
patent: 5132676 (1992-07-01), Kimura et al.
patent: 5240801 (1993-08-01), Hayashi et al.
patent: 5247190 (1993-09-01), Friend et al.
patent: 5330616 (1994-07-01), Yamazaki
patent: 5399502 (1995-03-01), Friend et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5430320 (1995-07-01), Lee
patent: 5453858 (1995-09-01), Yamazaki
patent: 5500750 (1996-03-01), Kanbe et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5592318 (1997-01-01), Majima et al.
patent: 5684365 (1997-11-01), Tang et al.
patent: 5706064 (1998-01-01), Fukunaga et al.
patent: 5706067 (1998-01-01), Colgan et al.
patent: 5739890 (1998-04-01), Uda et al.
patent: 5767541 (1998-06-01), Hanagasaki
patent: 5767827 (1998-06-01), Kobayashi et al.
patent: 5877832 (1999-03-01), Shimada
patent: 5895228 (1999-04-01), Biebuyck et al.
patent: 5907376 (1999-05-01), Shimada et al.
patent: 5910271 (1999-06-01), Ohe et al.
patent: 5917571 (1999-06-01), Shimada
patent: 5933204 (1999-08-01), Fukumoto
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 5949107 (1999-09-01), Zhang
patent: 5976698 (1999-11-01), Staral et al.
patent: 5998805 (1999-12-01), Shi et al.
patent: 6008876 (1999-12-01), Moore
patent: 6037197 (2000-03-01), Yamazaki et al.
patent: 6049132 (2000-04-01), Iwahashi et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6191183 (2001-02-01), Kobayashi et al.
patent: 6246179 (2001-06-01), Yamada
patent: 6833560 (2004-12-01), Konuma et al.
patent: 2002/0000613 (2002-01-01), Ohtani et al.
patent: 0 768 352 (1997-04-01), None
patent: 0 881 668 (1998-12-01), None
patent: 0 893 485 (1999-01-01), None
patent: 0 899 987 (1999-03-01), None
patent: 1 058 484 (2000-12-01), None
patent: 07-258410 (1995-10-01), None
patent: 10-092576 (1998-04-01), None
patent: 10-189252 (1998-07-01), None
patent: WO 90/13148 (1990-11-01), None
European Search Report re application No. EP 03 02 0964, mailed Dec. 3, 2003.
Fritsch, U. et al, “A Submicron CMOS Two Level Metal Process with Planarization Techniques,” V-MIC Conf., Jun. 13-14, 1988, IEEE, pp. 69-75, (1988).
Ibaraki, N. et al, “A New a-Si TFT with SiO2/SiNx Gate Insulator for 10.4 inch LCDs,” Proceedings of the International Display Research Conference, IEEE, pp. 97-100, (1991).
Pramanik, D. et al, “A High Reliability Triple Metal Process for High Performance Application Specific Circuits,” VLSI Multilevel Interconnection Conference, Jun. 11-12, 1991, pp. 27-33, (1991).
Wolf, S.,Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Sunset Beach, CA, pp. 201-204, (1990).
Tsutsui, T. et al, “Electroluminescence in Organic Thin Films,” Photochemical Processes in Organized Molecular Systems, pp. 437-450, (1991).
Baldo, M.A. et al, “Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices,” Nature, vol. 395, pp. 151-154, Sep. 10, (1998).
Baldo, M.A. et al, “Very High-Efficiency Green Organic Light-Emitting Devices Based on Electrophosphorescence,” Applied Science Letters, vol. 75, No. 1, pp. 4-6, Jul. 5, (1999).
Schenk, H. et al, “Polymers for Light Emitting Diodes,” EuroDisplay '99, Proceedings of the 19th International Display Research Conference, Berlin, Germany, Sep. 6-9, pp. 33-37, (1999).
Tsutsui, T. et al, “High Quantum Efficiency in Organic Light-Emitting Devices with Iridium-Complex as a Triplet Emissive Center,” Japanese Journal of Applied Physics, vol. 38, part 2, No. 12B, pp. L1502-L1504, Dec. 15, (1999).
Rajeswaran, G., “OLED Manufacturing Technology,” Seminar M-7, Society for Information Display, Seminar Lecture Notes, vol. 1, Baltimore, MD, May 19 and May 23, (2003).
European Search Report re Application No. EP 01 10 4296, mailed May 30, 2001.
European Search Report re Application No. EP 01 10 4296.7, mailed May 30, 2001.
Konuma Toshimitsu
Maruyama Junya
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Louie Wai-Sing
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Self-light-emitting device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self-light-emitting device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-light-emitting device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3644810