Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-12-09
2000-12-12
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257291, 257382, 257383, 257420, H01L 2904, H01L 31036, H01L 2976, H01L 2994
Patent
active
061602728
ABSTRACT:
A semiconductor device is formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate. The semiconductor device is used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed. A source electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The source electrode is electrically coupled to the source region. A drain electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The drain electrode is electrically coupled to the drain region. An insulation layer is formed on the active layer. A gate electrode is formed on the insulation layer.
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Arai Michio
Yamauchi Yukio
Fenty Jesse A.
Hardy David
Semiconductor Energy Laboratory Co. Ltd
TDK Corporation
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