Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-09-26
2006-09-26
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S047000, C257S072000, C257S079000, C257S080000, C257S081000, C257S082000, C257S083000, C257S084000, C257S290000, C257S291000, C257SE33001, C257SE25019, C257SE25028, C257SE31095
Reexamination Certificate
active
07112462
ABSTRACT:
The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.
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Arai Michio
Yamauchi Yukio
Arent & Fox PLLC
Fenty Jesse A.
Jackson Jerome
TDK Corporation
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