Self-igniting thyristor with a plurality of discrete, field cont

Details Self-igniting thyristor with a plurality of discrete, field cont Self-igniting thyristor with a plurality of discrete, field cont

1981-09-28

1984-03-13

Clawson, Jr., Joseph E.

357 13, 357 51, 357 52, 357 53, 357 23, 357 30, H01L 2974, H01L 2990, H01L 2902, H01L 2940

Patent

active

044371071

ABSTRACT:
A self-igniting thyristor has a zener diode integral with the thyristor, which zener diode bridges the central junction of the thyristor and the breakdown voltage of which determines the breakover voltage of the thyristor. The breakdown voltage of the zener diode is determined by the field geometry in that part of the PN junction of the zener diode which is located near the surface of the semiconductor body, where the breakdown is arranged to take place. A conducting screen is arranged over said portion of the PN junction of the zener diode and is separated from the underlying portion of the surface of the semiconductor body by an insulating layer. The thyristor is provided with means for influencing the potential of the screen, which in turn influences the field geometry and thus the breakdown voltage of the zener diode and the breakover voltage of the thyristor.

REFERENCES:
patent: 3204160 (1965-08-01), Sah
patent: 3236698 (1966-02-01), Shockley
patent: 3427512 (1969-02-01), Mapother
patent: 3432731 (1969-03-01), Whittier
IEDM (International Electron Devices Meeting), Technical Digest, 1980, "Functional Integration of Power MOS & Bipolar Devices", T. Tihanyi, pp. 75-78, Dec. 1980.

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