Self heating monitor for SiGe and SOI CMOS devices

Details Self heating monitor for SiGe and SOI CMOS devices Self heating monitor for SiGe and SOI CMOS devices

2008-07-29

2008-07-29

Raymond, Edward (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system

Performance or efficiency evaluation

Reexamination Certificate

active

10711224

ABSTRACT:
A structure, apparatus and method for deterring the temperature of an active region in semiconductor, particularly a FET is provided. A pair FETs are arranged on a silicon island a prescribed distance from one another where the silicon island is surrounded by a thermal insulator. One FET is heated by a current driven therethrough. The other FET functions as a temperature sensor by having a change in an electrical characteristic versus temperature monitored. By arranging multiple pairs of FETs separated by different known distances, the temperature of the active region of one of the FETs may be determined during operation at various driving currents.

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