Self-focusing detector pixel structure having improved sensitivi

Details Self-focusing detector pixel structure having improved sensitivi Self-focusing detector pixel structure having improved sensitivi

1996-07-23

1998-02-24

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

437 3, H01L 310232, H01L 310352

Patent

active

057214298

ABSTRACT:
An array of photodetectors is constructed of IR radiation-responsive Group II-VI alloy semiconductor material, such as HgCdTe. A novel photodetector structure utilizes internal reflections from mesa (10, 10') sidewalls and/or from reflective material (22) that is applied to the mesa sidewalls to achieve a concentration of incident infrared radiation into a significantly smaller radiation absorbing region (16). The resulting self-focusing or light piping effect enables the leakage current and other noise-generating processes to be minimized, while providing an effective large optical collection area. The fabrication of specular, flat, sloped mesa sidewalls is preferably accomplished by a reactive ion etch process. Signal crosstalk between photodetectors is reduced or eliminated since the radiation absorbing regions are fully delineated and isolated from one another by deep trenches that define the mesa sidewalls. Thus, the diffusion of optically generated carriers from one photodetector to an adjacent photodetector is prevented.

REFERENCES:
patent: 5113076 (1992-05-01), Schulte
patent: 5149956 (1992-09-01), Norton
patent: 5239179 (1993-08-01), Baker
patent: 5380669 (1995-01-01), Norton
patent: 5581084 (1996-12-01), Chapman et al.
"Some Properties of Photovoltaic Cd.sub.x Hg.sub.1-x Te Detectors for Infrared Radiation" by J. M. Pawlikowski et al., Infrared Physics, vol. 15 (1975) pp. 331-337. month not identified.

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