Self-doped complementary field effect transistor

Details Self-doped complementary field effect transistor Self-doped complementary field effect transistor

1992-11-04

1994-10-11

Loke, Steven Ho Yen

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 24, 257194, 257274, H01L 31072, H01L 2906, H01L 31109, H01L 2980

Patent

active

053550056

ABSTRACT:
A complementary field effect structure having a first field effect device (26) including a quantum well having a first channel (12). A first doping region (14) is positioned adjacent to a first quantum well and a first gate electrode (29) is positioned so that the first doping region (14) is between the first gate electrode (29) and the first channel (12) . A second field effect device (37) includes a second channel (22) and a second doping region (19) positioned adjacent to the second channel. A second gate electrode (31) is positioned over the second channel (22) so that the second channel (22) is between the second gate electrode (31) and the second doping region (19). An interconnect electrically couples the first gate electrode (29) to the second gate electrode (31).

REFERENCES:
patent: 4743951 (1988-05-01), Chang et al.
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5113231 (1992-05-01), Soderstrom et al.
patent: 5142349 (1992-08-01), Zhu et al.

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