Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-02-07
1998-09-15
Le, Vu A.
Static information storage and retrieval
Floating gate
Particular biasing
36518503, 36518524, G11C 700
Patent
active
058089373
ABSTRACT:
The threshold voltage of a FLASH or FLOTOX memory cell set to fall within an erased threshold voltage range is programmed to fall within one of a plurality of programmed threshold voltage ranges by applying a substrate voltage to the substrate material, a drain voltage to the drain region, and one of a plurality of programming voltages to the control gate of the cell. With FLOTOX cells, a select voltage must also be applied to the select gate.
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Bergemont Albert
Chi Min-hwa
Le Vu A.
National Semiconductor Corporation
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