Self-convergence of post-erase threshold voltages in a flash mem

Details Self-convergence of post-erase threshold voltages in a flash mem Self-convergence of post-erase threshold voltages in a flash mem

1997-12-05

2000-02-15

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 36518533, G11C 1604

Patent

active

060260262

ABSTRACT:
An erase method provides for self-converging erase on a flash memory cell by rapidly switching a bias on a control gate while a lateral field is present in a channel region. Preferably, the lateral field is provided by differentially biasing the source and drain of the cell and the change in bias of the control gate is sufficiently fast to induce a transient response at the floating gate. The net transient vertical field formed across a tunneling oxide between the channel region and the floating gate causes moderate hot carrier injection between the channel region and the floating gate. This method is self-converging, since carrier injection to the floating gate will not happen unless a sufficient number of carriers are removed from the floating gate during the array step. Since the bulk of the self-converging effect occurs as the control gate voltage is transitioning and shortly thereafter, very little time is needed at the end of an erase pulse to effect this response.

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