Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2008-07-29
2008-07-29
Tang, Minh N (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S754120, C324S765010
Reexamination Certificate
active
11377632
ABSTRACT:
The surface photovoltage dopant concentration measurement of a semiconductor wafer is calibrated by biasing the semiconductor wafer into an avalanche breakdown condition in a surface depletion region; determining a contact potential difference value corresponding to an avalanche breakdown; determining small signal ac-surface photovoltage value corresponding to an avalanche breakdown; and using the values of the contact potential and the surface photovoltage to calculate a calibration constant that relates depletion layer capacitance and an inverse of the surface photovoltage.
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Fish & Richardson P.C.
Semiconductor Diagnostics, Inc.
Tang Minh N
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