Self-biasing transistor structure and an SRAM cell having...

Details Self-biasing transistor structure and an SRAM cell having... Self-biasing transistor structure and an SRAM cell having...

2005-01-28

2008-10-28

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S241000, C257S329000, C257S402000, C257S403000, C438S289000

Reexamination Certificate

active

07442971

ABSTRACT:
By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.

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