Self-biasing non-magnetic giant magnetoresistance

Details Self-biasing non-magnetic giant magnetoresistance Self-biasing non-magnetic giant magnetoresistance

1996-07-30

1997-12-09

Evans, Jefferson

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

056966555

ABSTRACT:
A self-biasing, non-magnetic giant magnetoresistive sensor constructed from a thin film of inhomogeneous magnetoresistive material showing Giant Magnetresistance (GMR) at T=300.degree. K., e.g., Mercury Cadmium Telluride. In one embodiment, the sensor has a silicon substrate, a layer of inhomogeneous magnetoresistive material, e.g., Hg.sub.l-x Cd.sub.x Te, and electrodes attached to the non-homogeneous magnetoresistive layer. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate. In another embodiment, the sensor is an active element of a read/write head, particularly well suited for reading information signals stored in a magnetic medium.

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