Oscillators – Solid state active element oscillator – Transistors
Patent
1981-08-14
1984-07-31
Heyman, John S.
Oscillators
Solid state active element oscillator
Transistors
331177V, 357 14, 357 15, 357 22, 357 41, 357 51, H03B 500, H01L 2704
Patent
active
044633220
ABSTRACT:
A microwave voltage-controlled oscillator includes a varactor-controlled tuned circuit connected to the gate of an FET. The gate of the FET forms a Schottky barrier contact with the channel region. This Schottky barrier operates to clip the RF voltages generated in the gate circuit, and this clipping is used to provide the necessary gate bias to set the operating point of the VCO. No other source of bias is provided, and thus no DC return path from the gate circuit to the source or drain of the FET exists. Thus, the other circuit elements normally required to establish the gate operating point, which would have high frequency resonances, are eliminated. This permits operation of a microwave VCO over an extremely broad bandwidth.
REFERENCES:
patent: 4135168 (1979-01-01), Wade
patent: 4189688 (1980-02-01), Sechi et al.
Scott et al., "Octave Band Varactor-Tuned GaAs Fet Oscillators", IEEE Internation Solid State Conference, New York, Feb. 1981, pp. 138-139.
Rauscher, "Large Signal Tech. for Designing Single Frequency & Voltage-Controlled GaAs FET Oscillators", IEEE Microwave Theory & Tech., vol. MTT-29, No. 4, 4/81.
Rauscher, "Broad Band Varactor-Tuned GaAs FET Oscillators", Electronic Letters, vol. 16, No. 14, Jul. 1980.
Wade, "X-Band Reverse Channel GaAS FET Power VCO", Microwave Journal, vol. 21, Apr. 1978, p. 92.
Brehm Gailon E.
Scott Bentley N.
Callahan Timothy P.
Comfort James T.
Groover Robert
Heyman John S.
Sharp Melvin
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