Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-04-29
1988-06-07
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
3072191, 307529, 307271, 333218, H03B 1900, H03L 700
Patent
active
047499494
ABSTRACT:
A microwave frequency multiplier employs a first diode and a second diode each coupled in anti-parallel relationship across a signal input of a finline structure, each of the diodes being associated with signal-induced biasing elements for self biasing the diodes. A bias is caused to occur at internal nodes which increase with increased input power for a broad range of input power levels. The presence of such biasing results in waveform clipping at higher signal levels. Relative to prior art, the conversion loss will remain optimum up to high input power over an entire high-power input range. Additional external bias may be employed in alternative embodiments.
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Hu, "Mm-Wave Freq. Mult. Employ Semiconductor Diodes in Balanced Configuration", MSN & CT, 1986, pp. 109-112.
Dahele et al., "Slimguide Freq. Mult. for Microwave Applications", Electrical Communications, vol. 49, No. 1, 1974, pp. 65-71.
A Dethlefsen, et al., "Millimeter-Wave Multipliers Rely on Diode Integrated Circuits in Finline Structures for High Output Power", RF & Microwave Measurement Symposium and Exhibition, Hewlett Packard, Publication No. 5954-1529, Apr., 1985 (sic.).
Albin Robert D.
David Frank K.
Callahan Timothy P.
Hewlett--Packard Company
Milks, III William C.
Miller Stanley D.
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