Self-biased spin valve sensor

Details Self-biased spin valve sensor Self-biased spin valve sensor

1996-11-27

1998-08-18

Levy, Stuart S.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

057965617

ABSTRACT:
A self-biased spin valve (SV) magnetoresistive (MR) sensor is disclosed having a free layer separated from a pinned layer by a spacer1 layer and further having the free layer separated from a keeper layer by a spacer2 layer. The free layer being disposed between the keeper layer and the pinned layer. The keeper layer in combination with the sense current flowing in the sensor is used as a means of pinning the magnetization of the pinned layer. By using the soft keeper layer in combination with the sense current as a means of pinning the pinned layer magnetization as opposed to the use of the conventional antiferromagnetic layer, the SV sensor dependency on the blocking temperature of the antiferromagnetic layer is eliminated.

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M. Ueno and S. Tanoue, "Properties for the Magnetoresistive Elements for NiFe/Cu Multilayers Using the SAL Biasing Method", (1995), pp. 401-404.

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