Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1993-11-10
1994-12-20
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330296, H03F 316
Patent
active
053748999
ABSTRACT:
A power amplifier for microwave frequencies utilizes a FET device operating from a common voltage source. The voltage source has the positive terminal coupled to the drain electrode of the FET. The gate electrode of the FET is adapted to receive a RF signal while the source electrode of the FET includes a voltage limiting diode that is in parallel across the source impedance. In operation the extra current required from the voltage source during power amplification is passed through the diode and the FET source bypass capacitor. This results in the FET source voltage remaining relatively constant to enable improved power and gain operation.
REFERENCES:
patent: 4275362 (1981-06-01), Harford
Gannaway et al., A Gasfet preamplifier for 432MHz with 0.5dB noise figure, Dec. 1980, pp. 1270-1275.
Gallium Arsenide Integrated Circuits Design and Technology, edited by Joseph Munn, published by McMillian publishing Company (1988); chapter 4, entitled "Monolithic Microwave Integrated Circuit Design or MMIC Design", pp. 249-262.
Bahl Inder J.
Griffiths James R.
Dudek James
Hogan Patrick M.
ITT Corporation
Mullins James B.
Plevy Arthur L.
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