Self biased multilayer magnetoresistance sensor

Electricity: measuring and testing – Magnetic – Magnetometers

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

338 32R, 360113, G01R 3309, H01L 3308, G11B 530

Patent

active

056358350

ABSTRACT:
A self-bias sensor including a current source, a resistance measuring device and a sensor element sensitive to a magnetic field to be measured. The sensor element receives from the current source a current which creates a self-biasing field. The sensor element includes a first ferromagnetic layer having a magnetization direction which is sensitive to the magnetic field and when not subject to the magnetic field, and is oriented by the self-biasing field in a direction perpendicular to a longitudinal direction of the sensor element; a second ferromagnetic layer disposed between a first and second conductive layer, where the second ferromagnetic layer has a magnetization which is blocked and directed in the longitudinal direction; and a third ferromagnetic layer which is disposed on the second conductive layer and has a magnetization direction which is sensitive to the magnetic field and, when not subject to the magnetic field, is oriented by the self-biasing field in a second direction perpendicular to the longitudinal direction and substantially of an opposite sense to the magnetization of the first ferromagnetic layer.

REFERENCES:
patent: 4713708 (1987-12-01), Krounbi et al.
patent: 4816948 (1989-03-01), Kamo et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5422571 (1995-06-01), Gurney et al.
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5461527 (1995-10-01), Akiyama et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5508867 (1996-04-01), Cain et al.
Patent Abstracts of Japan, vol. 18, No. 35 (E-1494), Jan. 19, 1994, JP-A-5 267 747, Oct. 15, 1993.
Patent Abstracts of Japan, vol. 15, No. 106 (E-1044), Mar. 13, 1991, JP-A-2 312 287, Dec. 27, 1990.
Patent Abstracts of Japan, vol. 16, No. 189 (P-1348), May 8, 1992, JP-A-4 024 575, Jan. 28, 1992.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Self biased multilayer magnetoresistance sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self biased multilayer magnetoresistance sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self biased multilayer magnetoresistance sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-393913

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.