Fishing – trapping – and vermin destroying
Patent
1995-06-19
1997-03-11
Tsai, H. Jey
Fishing, trapping, and vermin destroying
437 40, 437 41, 437917, H01L 4900
Patent
active
056100795
ABSTRACT:
A substrate (10) of a semiconductor device includes a power section (12) and a control section (14). The power section includes doped regions (16, 18, 20) and terminals (22, 24, 26) which define power devices such as transistors or SCRs. The control region also includes doped areas including a parasitic collector (32). A minority carrier current (62) flows from the doped regions of the power section to the collector of the control section when the power device to substrate junction is forward-biased. A moat assembly (40) includes a first doped region (42) between the doped regions of the power and control sections. An electrical connection (46) connects the moat first doped region (42) with a moat second doped region (44). The self-biased moat assembly is isolated from ground such that it is self-biased negative in accordance with internal operating conditions of the semiconductor device. The minority charge carriers are collected by the moat first doped region. A current is created that flows from the first doped region through the electrical conductor to the moat second doped region. The majority carriers flowing through the substrate from the first section under the first doped region toward the second doped region. The majority carriers cause a voltage drop under the moat first doped region that results in an electric field that forms a minority carrier gradient which reduces parasitic minority carrier current flowing to the control section (14).
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Galecki Steven M.
Skebe Gerard G.
Horn John J.
Hudzinski Michael E.
Miller John M.
Reliance Electric Industrial Company
Tsai H. Jey
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