Self-assembled sub-nanolayers as interfacial adhesion...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S741000, C257S751000, C438S623000, C438S627000, C438S628000, C438S687000

Reexamination Certificate

active

07026716

ABSTRACT:
An electrical device is disclosed. The electrical device includes a substrate, and a self-assembled molecular layer on the substrate. The self-assembled molecular layer comprises a plurality of molecules, each molecule comprising a first end proximate to the substrate and a second end comprising sulfur distal to the substrate. A copper layer is on the self-assembled molecular layer.

REFERENCES:
patent: 4996075 (1991-02-01), Ogawa et al.
patent: 5057339 (1991-10-01), Ogawa
patent: 5077085 (1991-12-01), Schnur et al.
patent: 5079600 (1992-01-01), Schnur et al.
patent: 5389496 (1995-02-01), Calvert et al.
patent: 5468597 (1995-11-01), Calabrese et al.
patent: 5500315 (1996-03-01), Calvert et al.
patent: 5510216 (1996-04-01), Calabrese et al.
patent: 5648201 (1997-07-01), Dulcey et al.
patent: 5939150 (1999-08-01), Stelzle et al.
patent: 6348240 (2002-02-01), Calvert et al.
patent: 6784093 (2004-08-01), Lu et al.
patent: 2002/0079487 (2002-06-01), Ramanath et al.
patent: 2002/0105081 (2002-08-01), Ramanath et al.
Cotell, Catherine et al. (eds); “Surface Engineering;”ASM Handbook;1994; pp. 315-318; vol. 5: ASM International; Materials Park, Ohio.
Hu, Minghui et al.; “Structure and Morphology of Self-assembled 3-Mercaptopropyltrimethoxysilane Layers on Silicon Oxide;”Applied Surface Science;2001; pp. 307-316; vol. 181; Elsevier Science B.V.
Iler, R. K.; “Multilayers of Colloidal Particles;”Journal of Colloid and Interface Science;1966, pp. 569-594; vol. 21.
Krishnamoorthy, A. et al.; “Self-assembled Near-Zero-Thickness Molecular Layers as Diffusion Barriers for Cu Metalization;”Applied Physics Letters;Apr. 23, 2001; vol. 78; No. 17; American Institute of Physics.
Murarka, S. P.; “Materials Aspects of Copper Interconnection Technology for Semiconductor Applications;”Materials Science and Technology;Jul. 2001; pp. 749-758; vol. 17.
Porterfield, William; “10.5 Common Ligands and Complexes;”Inorganic Chemistry;1984; pp. 487-488; Addison-Wesley Publishing Company, Inc.; Reading, Massachusetts.
Ramanath, G.; “Gas-Phase Transport of WF6Through Annular Nanopipes in TiN During Chemical Vapor Deposition of W on TiN/Ti/SiO2Structures for integrated Circuit Fabrication;”Applied Physics Letters;Nov. 18, 1996; pp. 3179-3181; vol. 69; No. 21; American Institute of Physics.
Ramanath, G.; “Self-Assembled Subnanolayers as Interfacial Adhesion Enhancers and Diffusion Barriers for Integrated Circuits;”Applied Physics Letters;Jul. 14, 2003; pp. 383-385; vol. 83; No. 2; American Institute of Physics.
Wolf, Stanley et al.; “Silicon Processing for the VLSI Era;”Process Technology;2000; pp. 438, 782-783; vol. 1; Second Edition; Lattice Press; Sunset Beach California.
Ahrens, C. et al., “Electrical characterization of conductive and non-conductive barrier layers for Cu-metallization,” Applied Surface Science, 1995, pp. 285-290, vol. 91.
Ding, P.J. et al., “Effects of the addition of small amounts of Al to copper: Corrosion, resistivity, adhesion, morphology, and diffusion,” J. Appl. Phys., Spril 1994, pp. 3627-3631, vol. 75(7).
Ding, P.J. et al., “Oxidation resistant high conductivity copper films,” Appl. Phys. Lett. May 1994, pp. 2897-2899, vol. 64(21).
McBrayer, J.D. et al., “Diffusion of metals in silicon dioxide,” J. Electrochem. Soc., Jun. 1986, pp. 1242-1246, vol. 133(6).
Raghavan, G. et al., “Diffusion of copper through dielectric films under bias temperature stress,” Thin Solid Films, 2995, pp. 168-176, vol. 262 (1995).
Reed, M.A. and Tour, J.M., “Computing with molecules,” Scienfific American, 2000, pp. 86-93, vol. 282(6).
Sekiguchi, A. et al., “Microstructural and morphological changes during thermal cycling of Cu thin films,” J. Japan Inst. Metals, 2000, pp. 379-382, vol. 64(5).
ASM Handbook vol. 5, Surface Engineering, ASM International: Materials Park, Ohio. 1994, pp. 315-318.
Moshfegh, A.Z. et al., “Bias sputtered Ta modified diffusion barrier in Cu/Ta(Vb/Si(111) structures,” Thin Solid Films, 2000, pp 10-17, vol. 370.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Self-assembled sub-nanolayers as interfacial adhesion... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-assembled sub-nanolayers as interfacial adhesion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-assembled sub-nanolayers as interfacial adhesion... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3582549

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.