Semiconductor device manufacturing: process – Having organic semiconductive component
Patent
1997-03-14
1999-08-31
Eisenschenk, Frank C.
Semiconductor device manufacturing: process
Having organic semiconductive component
257 40, 257103, 257918, 438 22, 438478, 438584, 438758, 438761, 438780, 4284231, 4284242, H01L 3524, H01L 3300, B23B 2700
Patent
active
059465506
ABSTRACT:
A method for producing a ultrathin semiconducting film, utilizes a substrate with a reactive functionalized surface which is contacted with a reactant compound of a divalent and trivalent chelating metal to produce a metallo-functionalized surface. The metallo-functionalized surface is contacted with bisquinoline or a bisquinoline to produce a deposit of an oligomeric metallo-bisquinoline chelate, which is then contacted with the reactant metal compound to produce a fresh metallo-functionalized surface on the deposit. The fresh metallo-functionalized surface is contacted with the bisquinoline reactant to produce a further deposit of the oligomeric metallo-bisquinoline chelate, and these steps are repeated until a desired thickness of the deposit has been attained.
REFERENCES:
patent: 4833232 (1989-05-01), Chiang
patent: 5364654 (1994-11-01), Hosokawa et al.
patent: 5504183 (1996-04-01), Shi et al.
patent: 5518767 (1996-05-01), Rubner et al.
patent: 5599935 (1997-02-01), Hiratani et al.
patent: 5681659 (1997-10-01), Shi et al.
Eisenschenk Frank C.
University of Connecticut
Zeman Mary K
LandOfFree
Self-assembled semiconductor and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self-assembled semiconductor and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-assembled semiconductor and method of making same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2428643