Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-02-08
2005-02-08
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S004000, C257S005000, C257S738000
Reexamination Certificate
active
06853075
ABSTRACT:
A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.
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Abrams Gary W.
Auner Gregory W.
Iezzi Raymond
McCallister James Patrick
Naik Ratna
Abraham Fetsum
Kenyon & Kenyon
Wayne State University
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