Self-assembled monolayer etch barrier for indium-tin-oxide...

Coating processes – Nonuniform coating – Deforming the base or coating or removing a portion of the...

Reexamination Certificate

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C427S156000, C427S259000, C427S271000, C427S275000, C427S282000

Reexamination Certificate

active

06890599

ABSTRACT:
New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.

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