Self-alignment scheme for enhancement of CPP-GMR

Details Self-alignment scheme for enhancement of CPP-GMR Self-alignment scheme for enhancement of CPP-GMR

2006-10-10

2006-10-10

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Forming or treating article containing magnetically...

C216S040000, C216S067000, C029S603180, C204S192340, C430S296000

Reexamination Certificate

active

07118680

ABSTRACT:
A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

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