Self-alignment scheme for a heterojunction bipolar transistor

Details Self-alignment scheme for a heterojunction bipolar transistor Self-alignment scheme for a heterojunction bipolar transistor

2008-07-01

2008-07-01

Smith, Matthew S. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S565000, C257S578000, C257S583000, C257S585000, C257S588000, C257S593000, C438S253000

Reexamination Certificate

active

11460013

ABSTRACT:
Embodiments herein present a structure, method, etc. for a self-alignment scheme for a heterojunction bipolar transistor (HBT). An HBT is provided, comprising an extrinsic base, a first self-aligned silicide layer over the extrinsic base, and a nitride etch stop layer above the first self-aligned silicide layer. A continuous layer is also included between the first self-aligned silicide layer and the nitride etch stop layer, wherein the continuous layer can comprise oxide. The HBT further includes spacers adjacent the continuous layer, wherein the spacers and the continuous layer separate the extrinsic base from an emitter contact. In addition, an emitter is provided, wherein the height of the emitter is less than or equal to the height of the extrinsic base. Moreover, a second self-aligned silicide layer is over the emitter, wherein the height of the second silicide layer is less than or equal to the height of the first silicide layer.

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