Self-alignment of gate contacts at local or remote sites

Details Self-alignment of gate contacts at local or remote sites Self-alignment of gate contacts at local or remote sites

1978-06-06

1980-09-09

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 29578, 29589, B01J 1700

Patent

active

042210445

ABSTRACT:
A process for producing VLSI (very large scale integrated) circuits employs techniques of self-aligned gates and contacts for FET devices and for both diffused conducting lines in the substrate and polysilicon conducting lines situated on isolating field oxide formed on the substrate. Mask alignment tolerances are increased and rendered non-critical. The use of materials in successive layers having different etch characteristics permits selective oxidation of only desired portions of the structure without need for masking and removal of selected material from desired locations by batch removal processes again without use of masking. There results VLSI circuits having increased density and reliabilty. The process allows the simultaneous doping of two or more regions resulting in uniformity of device characteristics.

REFERENCES:
patent: 4124934 (1978-11-01), DeBrebisson

Affiliated with

Also associated with

Rating

Self-alignment of gate contacts at local or remote sites does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-alignment of gate contacts at local or remote sites, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-alignment of gate contacts at local or remote sites will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2219560