Self aligning fabrication method for sub-resolution phase shift

Details Self aligning fabrication method for sub-resolution phase shift Self aligning fabrication method for sub-resolution phase shift

1994-09-16

1997-01-07

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, 430316, 430317, 1566331, 1566341, 15665911, 216 12, G03F 712

Patent

active

055915493

ABSTRACT:
The invention describes the fabrication and use of a sub-resolution phase shift mask. The mask is formed using a single alignment step with all other alignment steps being accomplished by self alignment. This self alignment is made possible by using vertical anisotropic etching of an opaque material layer to form opaque spacers at the pattern edges of phase shifting material. The opaque spacers combine with phase shifting and other opaque regions of the mask to provide improved image resolution and depth of focus tolerance at the surface of an integrated circuit wafer.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5288568 (1994-02-01), Cathey
patent: 5300379 (1994-04-01), Dao
patent: 5382483 (1995-01-01), Young
"Lithography's Leading Edge, Part 1, Phase-Shift Technology", pub in Semiconductor International, Feb. 1992, pp. 42-47.

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