Self-aligned tungsten strapped source/drain and gate technology

Details Self-aligned tungsten strapped source/drain and gate technology Self-aligned tungsten strapped source/drain and gate technology

1996-07-16

1998-02-03

Quach, T. N.

Fishing, trapping, and vermin destroying

437160, 437192, 437193, H01L 21225, H01L 21255

Patent

active

057143986

ABSTRACT:
The present invention is to develop a proper new process for deep submicron PMOSFET. The characteristic of this process is using Si:Ge:B layer to deposit on the poly-Si film, then go through oxidation or diffusion method to diffuse the boron ion into the poly-Si gate in order to form p-type poly-Si gate. This layer can be etched selectively after spacer etching and reserve a concave gate structure. Thus, it can combine with selective W-CVD to form an excellent p-type poly-Si PMOSFET.

REFERENCES:
patent: 4330931 (1982-05-01), Liu
patent: 5168072 (1992-12-01), Moslehi
patent: 5242847 (1993-09-01), Ozturk et al.
patent: 5571744 (1996-11-01), Demirlioglu et al.
Sze, S. M., Physics of Semiconductor Devices, John Wiley & Sons, 2nd Edition, Year Not Known, p. 469.
Brews, J. R., et al., "Generalized Guide for MOSFET Miniaturization", IEEE Elec. Dev. Lett., vol. EDL-1, No. 1, 1 Jan. 1980, pp. 2-4.
Wolf, S., Silicon Processing for the VLSI Era, vol. 3, Lattice Press, 1995, p. 307.
Taur, Y., et al., "High Transconductance 0.1 mm pMOSFET", IEEE IEDM Tech. Digest, Dec. 1992, pp. 901-904.
Ting, C.Y., et al., "High Temperature Process on TiSi.sub.2 ", J. Electrochem. Soc., vol. 133, No. 12, Dec. 1986, pp. 2621-2625.
Miller, N.E., et al., "CVD Tungsten Interconnect . . . ", Solid State Technology, Dec. 1982, pp. 85-90.
Sekine, M., "Self-Aligned Tungsten Strapped Source/Drain and Gate Technology . . . ", IEEE IEDM Tech. Digest, Dec. 1994, pp. 493-496.

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