Self-aligned trench with selective trench fill

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 67, 437 73, 437 72, H01L 2176

Patent

active

049421379

ABSTRACT:
A method for fabricating a self-aligned trench structure in a semiconductor device is disclosed. In accordance with one method for fabricating the trench structure, an oxidation resistant material having an opening is used as a masking layer. The edge of the opening in the masking layer is covered by a sidewall spacer which protects a portion of the substrate from attack by the etchant used to form the trench. The trench is filled with a trench fill material by selective deposition using a seeding material formed on the sidewall of the trench as a nucleation site. After the trench is filled, the sidewall spacer is removed and the underlying substrate is oxidized to form an electrical insulation region around the upper portion of the trench. The mask layer is removed and the remaining substrate is doped using the insulation region surrounding the trench as a dopant mask.

REFERENCES:
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4679304 (1987-07-01), Bois
patent: 4830978 (1989-05-01), Teng et al.
patent: 4847214 (1989-07-01), Robb et al.
Advanced OSELCO Isolation with Shallow Grooves for Three-Quarter Micron ULSl's, T. Kaga, et al, Extended Abstracts 18th Conf. on Solid St Devices & Materials, pp. 61-64, Tokyo, Japan, Sep. '86.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Self-aligned trench with selective trench fill does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned trench with selective trench fill, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned trench with selective trench fill will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-94985

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.