Fishing – trapping – and vermin destroying
Patent
1989-08-14
1990-07-17
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 67, 437 73, 437 72, H01L 2176
Patent
active
049421379
ABSTRACT:
A method for fabricating a self-aligned trench structure in a semiconductor device is disclosed. In accordance with one method for fabricating the trench structure, an oxidation resistant material having an opening is used as a masking layer. The edge of the opening in the masking layer is covered by a sidewall spacer which protects a portion of the substrate from attack by the etchant used to form the trench. The trench is filled with a trench fill material by selective deposition using a seeding material formed on the sidewall of the trench as a nucleation site. After the trench is filled, the sidewall spacer is removed and the underlying substrate is oxidized to form an electrical insulation region around the upper portion of the trench. The mask layer is removed and the remaining substrate is doped using the insulation region surrounding the trench as a dopant mask.
REFERENCES:
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4679304 (1987-07-01), Bois
patent: 4830978 (1989-05-01), Teng et al.
patent: 4847214 (1989-07-01), Robb et al.
Advanced OSELCO Isolation with Shallow Grooves for Three-Quarter Micron ULSl's, T. Kaga, et al, Extended Abstracts 18th Conf. on Solid St Devices & Materials, pp. 61-64, Tokyo, Japan, Sep. '86.
Leiss John E.
Pfiester James R.
Sivan Richard D.
Chaudhuri Olik
Clingan Jr. James L.
Dockrey Jasper W.
Motorola Inc.
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