Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-06-19
2000-07-18
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257622, 438296, H01L 2104, H01L 214763
Patent
active
060911298
ABSTRACT:
A trench-isolated active device and a method of forming a trench-isolated active device on a semiconductor substrate wherein the conductive layer of the device is self-aligned with an isolation trench is disclosed. The method includes applying a conductive layer over a dielectric layer (e.g., gate oxide), forming an opening in the conductive layer and the dielectric layer, forming a trench in the substrate corresponding to the opening, passivating the side walls of the trench with a dielectric material, and filling the trench with a dielectric material. The structure includes a semiconductor substrate having a trench defining a cell region, conductive material in the cell region and adjacent to the trench, and a layer of dielectric material on the side walls of the trench and on the conductive material adjacent to the trench. The invention further contemplates that the trench contains dielectric material, preferably soft glass. The conductive material layer is self-aligned to the isolation trench, so there is no overlap of the conductive material and the isolation trench, and the isolation trench may be a minimum width necessary to isolate the device.
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Chaudhuri Olik
Cypress Semiconductor Corporation
Weiss Howard
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