Self-aligned thin-film transistor constructed using lift-off tec

Details Self-aligned thin-film transistor constructed using lift-off tec Self-aligned thin-film transistor constructed using lift-off tec

1995-04-17

1996-06-18

Dang, Trung

Fishing, trapping, and vermin destroying

437 40, 437924, 437944, 148DIG100, 148DIG102, 148DIG105, H01L 21265

Patent

active

055277268

ABSTRACT:
A thin-film field-effect transistor is fabricated by forming an electrically insulative island between the source and the drain. A cap is formed on the island with a brim that overhangs the island. A layer of source-drain metal, which will subsequently constitute the source and drain contacts, is then deposited upon the source, the drain, and the cap, but the overhang creates an exposed region which can be attacked by an etchant. When the etchant is applied, it etches away the cap, thereby lifting off the source-drain metal which coated the cap, leaving the fully formed source and drain contacts separated by the island.

REFERENCES:
patent: 4670097 (1987-06-01), Abdalla et al.
patent: 4700458 (1987-10-01), Suzuki et al.
patent: 4778773 (1988-10-01), Sukegawa
patent: 4788157 (1988-11-01), Nakamura
patent: 5010027 (1991-04-01), Possin et al.
Busta et al., "Self-Aligned Bottom-Gate Submicrometer-channel length a-Si:H Thin-Film Transistors", IEEE Trans. on Electron Devices, vol. 36, No. 12, Dec. 1989, pp. 2883-2888.
K. Asama et al., "A Self-Alignment Processed a-Si TFT Matrix Circuit for LCD Panels", Fujitsu Laboratories, Ltd. Atsugi, Japan, SID Digest, 1983, pp. 144-145.
B. Diem et al. "a-Si:H TFT: Potential Suitabilities for Gate and Source-Drain Self-Aligned Structure", Mat. Res. Soc. Symp. Proc., vol. 33 (1984), pp. 281-285.

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