Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-06-22
1994-05-03
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 66, 257 72, 257347, H01L 2904, H01L 31036, H01L 2701
Patent
active
053089979
ABSTRACT:
A thin film transistor with self-aligned source and drain regions is fabricated, in one embodiment, by forming an opening (124) in a dielectric layer (118) which overlies a substrate (116). A semiconductive sidewall spacer (130) is formed around the perimeter (126) of the opening (124) and adjacent to the sidewall (128) of the opening (124). A first electrode region (120) is electrically coupled to a first portion of the semiconductive sidewall spacer (130) at a first location along the perimeter (126) of the opening (124) which lies only in the second lateral half of the opening (124). A second electrode region (122) is electrically coupled to a second portion of the semiconductive sidewall spacer (130) at a second location along the perimeter (126) of the opening (124) which lies only in the first lateral half of the opening (124). A dielectric layer (132) is formed adjacent to the semiconductive sidewall spacer (130). A control electrode (134) is formed adjacent to the dielectric layer (132).
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Cooper Kent J.
Hayden James D.
Kirsch Howard C.
Roth Scott S.
Clingan Jr. James L.
Cooper Kent J.
Hille Rolf
Loke Steven
Motorola Inc.
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