Self-aligned thin capacitively-coupled thyristor structure

Details Self-aligned thin capacitively-coupled thyristor structure Self-aligned thin capacitively-coupled thyristor structure

2006-10-24

2006-10-24

Malsawma, Lex H. (Department: 2823)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

Reexamination Certificate

active

07125753

ABSTRACT:
A semiconductor memory device having a thyristor is manufactured in a manner that makes possible self-alignment of one or more portions of the thyristor. According to an example embodiment of the present invention, a gate is formed over a first portion of doped substrate. The gate is used to mask a portion of the doped substrate and a second portion of the substrate is doped before or after a spacer is formed. After the second portion of the substrate is doped, the spacer is then formed adjacent to the gate and used to mask the second portion of the substrate while a third portion of the substrate is doped. The gate and spacer are thus used to form self-aligned doped portions of the substrate, wherein the first and second portions form base regions and the third portion form an emitter region of a thyristor. In another implementation, the spacer is also adapted to prevent formation of salicide on the portion of the thyristor beneath the spacer, self-aligning the salicide to the junction between the second and third portions. In addition, dimensions such as width and other characteristics of the doped portions that are used to form a thyristor can be controlled without necessarily using a separate mask.

REFERENCES:
patent: 5204541 (1993-04-01), Smayling et al.
patent: 5208472 (1993-05-01), Su et al.
patent: 5240865 (1993-08-01), Malhi
patent: 5436482 (1995-07-01), Ogoh
patent: 5463231 (1995-10-01), Ogura et al.
patent: 5472887 (1995-12-01), Hutter et al.
patent: 5705439 (1998-01-01), Chang
patent: 5714774 (1998-02-01), Otsuki et al.
patent: 5759897 (1998-06-01), Kadosh et al.
patent: 5895955 (1999-04-01), Gardner et al.
patent: 5905293 (1999-05-01), Jeng et al.
patent: 5920103 (1999-07-01), Fulford et al.
patent: 5965464 (1999-10-01), Tsai et al.
patent: 6020242 (2000-02-01), Tsai et al.
patent: 6124610 (2000-09-01), Cheek et al.
patent: 6168999 (2001-01-01), Ziang et al.
patent: 6191462 (2001-02-01), Chen-Hua
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: 6512275 (2003-01-01), Hsu et al.
patent: 6521487 (2003-02-01), Chen et al.
patent: 2002/0093030 (2002-07-01), Hsu et al.
patent: 2002/0100918 (2002-08-01), Hsu et al.
patent: 2002/0109150 (2002-08-01), Kajiyama

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