Self-aligned structure and process for DMOS transistor

Details Self-aligned structure and process for DMOS transistor Self-aligned structure and process for DMOS transistor

1991-11-22

1992-12-15

Quach, T. N.

Fishing, trapping, and vermin destroying

437 29, 437150, 437228, 437978, 148DIG43, 148DIG126, H01L 21336

Patent

active

051717050

ABSTRACT:
Method and structure is disclosed for a high-density DMOS transistor with an improved body contact. The improvement comprises a self-aligned structure in combination with a body contact region which overdopes the source region in order to minimize the number of critical photoresist steps. The use of two dielectric spacers obviates the need for a separate contact mask.

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Mori, M., et al., "An Insulated Gate Bipolar Transistor with a Self-Aligned DMOS Structure", IEEE IEBM Tech. Digest, 1988, pp. 813-816.

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