Self-aligned split-gate NAND flash memory and fabrication...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185290, C257S314000

Reexamination Certificate

active

06992929

ABSTRACT:
Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion in the active area of a substrate. Each cell has control and floating gates which are stacked and self-aligned with each other, and erase and select gates which are split from and self-aligned with the stacked gates, with select gates at both ends of each row which partially overlap the bit line the source diffusions. The channel regions beneath the erase gates are heavily doped to reduce the resistance of the channel between the bit line and source diffusions, and the floating gates are surrounded by the other gates in a manner which provides significantly enhanced high voltage coupling to the floating gates from the other gates. The memory cells are substantially smaller than prior art cells, and the array is biased so that all of the memory cells in it can be erased simultaneously, while programming is bit selectable.

REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5050125 (1991-09-01), Momodomi et al.
patent: 6486509 (2002-11-01), Van Houdt
patent: 6818512 (2004-11-01), Hsieh
patent: 6861700 (2005-03-01), Guterman et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Self-aligned split-gate NAND flash memory and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned split-gate NAND flash memory and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned split-gate NAND flash memory and fabrication... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3538902

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.