Self-aligned source process and apparatus

Details Self-aligned source process and apparatus Self-aligned source process and apparatus

1991-03-20

1992-04-07

Prenty, Mark

357 239, 357 2311, 357 49, H01L 2968, H01L 2906, H01L 2978, H01L 2712

Patent

active

051032740

ABSTRACT:
A method and apparatus for self-aligning a source region with a field oxide region and a polysilicon gate and word line in a semiconductor device. This method and apparatus allows reduced memory cell size and improved device density by substantially eliminating the bird's beak encroachment and corner rounding effects usually found between neighboring cells due to inadequacies in the prior art photolighography process.

REFERENCES:
patent: 4620361 (1986-11-01), Matsukawa et al.
patent: 4814286 (1989-03-01), Tam
patent: 4861730 (1989-08-01), Hsia et al.
S. K. Ghandhi, VLSI Fabrication Principles, 499-509 and 534-541, (1983).

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