Self-aligned sloped contact

Details Self-aligned sloped contact Self-aligned sloped contact

1990-04-13

1992-03-10

Ryan, Patrick J.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including aperture

428209, 428446, 428901, B32B 300

Patent

active

050949004

ABSTRACT:
A self-aligned, sloped contact, through BPSG and thick TEOS (at least 200 nm but preferably 300-500 nm or more). Sloping is achieved through exploitation of BPSG and TEOS etch characteristics, to independently form concave and convex sidewalls, respectively. Self-alignment is obtained through thick conformal TEOS, along a sidewall of an underlying structure such as a transistor gate, directing contact formation away from the structure. TEOS etch is timed, allowing simultaneous formation of contacts to substrate and gates without overetching gates.

REFERENCES:
patent: 4732801 (1988-03-01), Joshi
patent: 4875971 (1989-10-01), Orbach et al.

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