Self-aligned silicided base bipolar transistor and resistor and

Details Self-aligned silicided base bipolar transistor and resistor and Self-aligned silicided base bipolar transistor and resistor and

1990-04-02

1991-09-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437238, 437200, 437918, 148DIG123, H01L 21328

Patent

active

050454838

ABSTRACT:
A bipolar transistor and resistor are provided. Fabrication includes using a high temperature oxide to form sidewall spacers for the transistor contacts and/or to overlay the resistor portion of the device. Deposition of the HTO is combined with dopant drive-in so that fewer total steps are required. The process is compatible with MOS technology so that the bipolar transistor and resistor can be formed on a substrate along with MOS devices.

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Gomi et al., "A Sub-30psec Si Bipolar LSI Technology", IEDM Technical Digest, (1988) pp. 744-747.
Takemura et al., "BSA Technology for Sub-100 mn Deep Base Bipolar Transistors", IEDM Technical Digest (1987), pp. 375-377.
Chiu, et al., "A Bird's Beak Free Local Oxidation Technology Feasible to VSLI Circuits Fabrication", IEEE Transactions on Electron Devices, vol. ED-29, No. 4, pp. 536-540, Apr. 1982.

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