Self-aligned silicide in a polysilicon self-aligned bipolar tran

Details Self-aligned silicide in a polysilicon self-aligned bipolar tran Self-aligned silicide in a polysilicon self-aligned bipolar tran

1987-02-10

1988-12-06

Kucia, R. R.

Metal treatment

Stock

Ferrous

148DIG11, 148DIG147, 357 71, 357 67, H01L 2970

Patent

active

047898852

ABSTRACT:
A method of forming double polysilicon contacts to underlying diffused regions of a semiconductor body which includes forming first and second level electrically conductive silicon layers over the body which contact respective first and second diffused regions of the body. The diffused regions are formed such that said first diffused region is ringed by said second diffused region. The second silicon layer thus overlaps the first silicon layer. The top surfaces of the first and second silicon layers are silicided such that the silicide formed over the first silicon layer is aligned with the edge of the second silicon layer.

REFERENCES:
patent: 4583106 (1986-04-01), Anantha et al.
patent: 4625391 (1985-12-01), Sasaki
patent: 4670967 (1987-06-01), Hazuki
patent: 4712125 (1987-12-01), Bhatia
patent: 4729965 (1988-03-01), Tamaki et al.

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