Self-aligned silicide contacts formed from deposited silicon

Details Self-aligned silicide contacts formed from deposited silicon Self-aligned silicide contacts formed from deposited silicon

1997-12-17

2000-07-25

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257755, 257382, 257368, 257768, H01L 2354, H01L 21441

Patent

active

060939672

ABSTRACT:
Self-aligned silicide contacts having a height that is at least about equal to the gate height are formed by depositing silicon over active regions of the substrate, depositing a refractory metal over the silicon, and heating the silicon and the refractory metal. The deposited silicon may be amorphous silicon in which case the deposition temperature can be as low as 580.degree. C. If polysilicon is deposited, the deposition temperature has to be at least 620.degree. C.

REFERENCES:
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patent: 5254874 (1993-10-01), Malwah
patent: 5294822 (1994-03-01), Verrett
patent: 5420070 (1995-05-01), Matsuura et al.
patent: 5438214 (1995-08-01), Egawa et al.
patent: 5635765 (1997-06-01), Larson
Wolf, "Silicon Processing for the VLSI ERA" vol. 2: Process Integration pp. 144-152 (1990).

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