Self-aligned semiconductor device with non-diffusable contacts

Details Self-aligned semiconductor device with non-diffusable contacts Self-aligned semiconductor device with non-diffusable contacts

1987-09-25

1988-11-01

James, Andrew J.

357 41, 357 51, 357 59, H01L 2978

Patent

active

047823739

ABSTRACT:
An active portion of a cell of a static RAM semiconductor device comprising a MOSFET and a variable resistor load device having non-diffused contacts which are self-aligned is described. A polycrystalline gate is used as a mask for the implantation of a source and a drain into a semiconductor substrate. Following the formation of a conformal dielectric layer and a conformal polycrystalline layer PtSi contacts are formed. These contacts are also aligned by the gate and do not diffuse and therefore may be spaced closely together. As the MOSFET of the device is turned "on" and "off" the resistance of the load device increases and decreases proportionately.

REFERENCES:
patent: 4240097 (1980-12-01), Raymond
patent: 4453175 (1984-06-01), Ariizumi

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