Self-aligned semiconductor device

Details Self-aligned semiconductor device Self-aligned semiconductor device

1991-06-21

1992-09-08

Prenty, Mark V.

357 60, 357 59, 357 68, H01L 2972, H01L 2904, H01L 2348

Patent

active

051463040

ABSTRACT:
A method of forming a self-aligned contact to a transistor component located on a semiconductor substrate comprising forming a transistor component opening in a masking layer overlying a semiconductor substrate and using epitaxial lateral overgrowth to form a self-aligned contact, the epitaxial overgrowth beginning in the masking layer opening at an upper surface of the semiconductor substrate and extending normal to and laterally over the masking layer surface.

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