Self-aligned, self-passivated advanced dual lift-off heterojunct

Details Self-aligned, self-passivated advanced dual lift-off heterojunct Self-aligned, self-passivated advanced dual lift-off heterojunct

1991-08-15

1993-02-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 80, 437944, 357 16, 357 34, 257198, 257523, H01L 21265, H01L 2970

Patent

active

051852748

ABSTRACT:
Heterojunction bipolar transistor is formed by using a common photoresist mask for self-aligning all critical dimensions including emitter and emitter contact to base contact to proton damaged collector regions beneath base contact and to passivate emitter periphery at same time.

REFERENCES:
patent: 4731340 (1988-03-01), Chang et al.
patent: 4889831 (1989-12-01), Ishii et al.
patent: 4996165 (1991-02-01), Chang et al.
patent: 5124270 (1992-06-01), Morizuka

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