Self-aligned selective hemispherical grain deposition...

Details Self-aligned selective hemispherical grain deposition... Self-aligned selective hemispherical grain deposition...

2006-09-05

2006-09-05

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C438S245000, C438S386000

Reexamination Certificate

active

07101768

ABSTRACT:
As disclosed herein, a method is provided, in an integrated circuit, for forming an enhanced capacitance trench capacitor. The method includes forming a trench in a semiconductor substrate and forming an isolation collar on a sidewall of the trench. The collar has at least an exposed layer of oxide and occupies only a “collar” portion of the sidewall, while a “capacitor” portion of the sidewall is free of the collar. A seeding layer is then selectively deposited on the capacitor portion of the sidewall. Then, hemispherical silicon grains are deposited on the seeding layer on the capacitor portion of the sidewall. A dielectric material is deposited, and then a conductor material, in that order, over the hemispherical silicon grains on the capacitor portion of the sidewall.

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