Self-aligned Schottky metal semi-conductor field effect transist

Details Self-aligned Schottky metal semi-conductor field effect transist Self-aligned Schottky metal semi-conductor field effect transist

1980-02-19

1982-07-06

Rosenberger, R. A.

357 22, H01L 21265

Patent

active

043386164

ABSTRACT:
A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed.

REFERENCES:
patent: 3668481 (1972-06-01), Saltich et al.
patent: 4128439 (1978-12-01), Jambotkar
patent: 4263605 (1981-04-01), Christou et al.
Field, R. K., "Pico-Second Diode Takes a 450 Volt Jolt", Electronic Design, 25 Oct. 1967, pp. 40, 42.

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